2n/pn/sst4117a series vishay siliconix document number: 70239 s-04028?rev. f, 04-jun-01 www.vishay.com 7-1 n-channel jfets 2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a PN4119A sst4119
part number v gs(off) (v) v (br)gss min (v) g fs min ( s) i dss min ( a) 4117 ?0.6 to ?1.8 ?40 70 30 4118 ?1 to ?3 ? 40 80 80 4119 ?2 to ?6 ?40 100 200
ultra-low leakage: 0.2 pa very low current/voltage operation ultrahigh input impedance low noise insignificant signal loss/error voltage with high-impedance source low power consumption (battery) maximum signal output, low noise high sensitivity to low-level signals high-impedance transducer amplifiers smoke detector input infrared detector amplifier precision test equipment the 2n/pn/sst4117a series of n-channel jfets provide ultra-high input impedance. these devices are specified with a 1-pa limit and typically operate at 0.2 pa. this makes them perfect choices for use as high-impedance sensitive front-end amplifiers. the hermetically sealed to-206af package allows full military processing per mil-s-19500 (see military information). the t o-226a (to-92) plastic package provides a low-cost option. the to-236 (sot-23) package provides surface-mount capability. both the pn and sst series are available in tape-and-reel for automated assembly (see packaging information). g s to-206af (to-72) d top view 2n4117a 2n4118a 2n4119a c 1 23 4 d g top view pn4117a pn4118a PN4119A to-226aa (to-92) s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst4117 (t7)* sst4118 (t8)* sst4119 (t9)* *marking code for to-236 for applications information see an105.
2n/pn/sst4117a series vishay siliconix www.vishay.com 7-2 document number: 70239 s-04028 ? rev. f, 04-jun-01
gate-source/gate-drain voltage ? 40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature : (2n prefix) ? 65 to 175 c . . . . . . . . . . . . . . . . . . . (pn, sst prefix) ? 55 to 150 c . . . . . . . . . . . . . operating junction temperature : (2n prefix) ? 55 to 175 c . . . . . . . . . . . . . . . . . . . (pn, sst prefix) ? 55 to 150 c . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation (case 25 c) : (2n prefix) a 300 mw . . . . . . . . . . . . . . . . . . . . . . (pn, sst prefix) b 350 mw . . . . . . . . . . . . . . . . notes a. derate 2 mw/ c above 25 c b. derate 2.8 mw/ c above 25 c
limits 4117 4118 4119 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 70 ? 40 ? 40 ? 40 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 0.6 ? 1.8 ? 1 ? 3 ? 2 ? 6 v saturation drain current i dss v ds = 10 v, v gs = 0 v 30 90 80 240 200 600 a v gs = ? 20 v v ds = 0 v ? 0.2 ? 1 ? 1 ? 1 pa v gs = ? 20 v v ds = 0 v t a = 150 c 2n ? 0.4 ? 2.5 ? 2.5 ? 2.5 na gate reverse current i gss v gs = ? 10 v pn ? 0.2 ? 1 ? 1 ? 1 v gs = ? 10 v v ds = 0 v sst ? 0.2 ? 10 ? 10 ? 10 pa v gs = ? 10 v v ds = 0 v t a = 100 c pn/sst ? 0.03 ? 2.5 ? 2.5 ? 2.5 na gate operating current b i g v dg = 15 v, i d = 30 a ? 0.2 drain cutoff current b i d(off) v ds = 10 v, v gs = ? 8 v 0.2 pa gate-source forward voltage b v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 10 v, v gs = 0 v 70 210 80 250 100 330 common-source output conductance g os v ds = 10 v, v gs = 0 v f = 1 khz 3 5 10 s common-source 2n/pn 1.2 3 3 3 common-source input capacitance c iss v ds = 10 v sst 1.2 common-source v gs = 0 v f = 1 mhz 2n/pn 0.3 1.5 1.5 1.5 pf common-source reverse transfer capacitance c rss f = 1 mhz sst 0.3 equivalent input noise voltage b e n v ds = 10 v, v gs = 0 v f = 1 khz 15 nv ? hz notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nt b. this parameter not registered with jedec.
2n/pn/sst4117a series vishay siliconix document number: 70239 s-04028 ? rev. f, 04-jun-01 www.vishay.com 7-3 gate leakage current drain current and transconductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current on-resistance and output conductance vs. gate-source cutoff voltage output characteristics 1000 0 ? 5 ? 4 ? 3 ? 2 ? 1 800 0 06 30 g fs i dss t a = 25 c 100 ma i gss @ 25 c 100 ma output characteristics 500 400 300 100 0 ? 0.5 v ? 1.0 v ? 2.0 v ? 1.5 v v gs = 0 v 15 0 ? 3 ? 5 ? 4 ? 2 ? 1 12 9 6 3 0 0.01 0.1 1 200 160 120 40 0 5 4 3 2 1 0 r ds @ i d = 10 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v f = 1 khz r ds g os t a = ? 55 c 125 c v ds = 10 v f = 1 khz 100 016 8 420 80 60 20 0 v gs = 0 v ? 0.5 v ? 0.4 v ? 0.3 v ? 0.2 v ? 0.1 v v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) v dg ? drain-gate voltage (v) i d ? drain current (ma) v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) 600 400 200 12 18 24 80 25 c v gs(off) = ? 0.7 v v gs(off) = ? 2.5 v 200 40 12 0 16 8 420 12 i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz 300 240 180 120 60 0 10 ma 0.1 pa 1 pa 10 pa 100 pa 1 na i gss @ 125 c v gs(off) = ? 2.5 v 10 ma v gs(off) = ? 2.5 v i dss ? saturation drain current ( a) g fs ? forward transconductance ( s) r ds(on) ? drain-source on-resistance ( ? ) g os ? output conductance ( s) g fs ? forward transconductance ( s) i g ? gate leakage i d ? drain current ( a) i d ? drain current ( a) t a = 125 c
2n/pn/sst4117a series vishay siliconix www.vishay.com 7-4 document number: 70239 s-04028 ? rev. f, 04-jun-01 300 240 180 60 0 transconductance vs. gate-source voltage transfer characteristics transconductance vs. gate-source voltage transfer characteristics common-source input capacitance vs. gate-source voltage circuit voltage gain vs. drain current 500 0 ? 4 ? 5 ? 2 ? 1 0 t a = ? 55 c 125 c 100 0 ? 0.4 ? 0.2 ? 0.8 ? 1.0 80 60 20 0 200 160 120 40 0 t a = 125 c ? 55 c t a = ? 55 c 125 c v ds = 10 v v ds = 10 v f = 1 khz v ds = 10 v v ds = 10 v f = 1 khz t a = ? 55 c 125 c 0.1 1 0.01 100 0 v gs(off) = ? 0.7 v ? 2.5 v r l 10 v i d assume v dd = 15 v, v ds = 5 v 2.0 0 f = 1 mhz v ds = 0 v 10 v v gs ? gate-source voltage (v) i d ? drain current (ma) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v gs(off) = ? 0.7 v v gs(off) = ? 0.7 v v gs(off) = ? 2.5 v v gs(off) = ? 2.5 v 40 80 60 20 40 80 25 c 25 c ? 0.6 0 ? 0.4 ? 0.2 ? 0.8 ? 1.0 ? 0.6 ? 30 ? 4 ? 5 ? 2 ? 1 ? 3 0 ? 16 ? 20 ? 8 ? 4 ? 12 120 400 300 100 200 1.6 1.2 0.4 0.8 a v g fs r l 1 r l g os 25 c 25 c g fs ? forward transconductance ( s) g fs ? forward transconductance ( s) a v ? voltage gain c iss ? input capacitance (pf) i d ? drain current ( a) i d ? drain current ( a)
2n/pn/sst4117a series vishay siliconix document number: 70239 s-04028 ? rev. f, 04-jun-01 www.vishay.com 7-5 2 1 0 0.01 0.1 1 equivalent input noise voltage vs. frequency i d ? drain current (ma) common-source reverse feedback capacitance vs. gate-source voltage on-resistance vs. drain current output conductance vs. drain current v ds = 10 v f = 1 khz 0.5 0 ? 8 ? 20 ? 16 ? 4 0.4 0.3 0.1 0 f = 1 mhz v ds = 0 v 10 v 10 100 1 k 100 k 10 k 200 0 v ds = 10 v i d = 10 ma v gs = 0 v t a = ? 55 c 125 c i d ? drain current (ma) v gs ? gate-source voltage (v) f ? frequency (hz) 0.2 160 120 40 80 ? 12 v gs(off) = ? 2.5 v 20 0 0.01 0.1 1 16 12 8 4 v gs(off) = ? 0.7 v ? 2.5 v t a = 25 c 25 c e n ? noise voltage nv / hz r ds(on) ? drain-source on-resistance ( ? ) g os ? output conductance ( s) c rss ? reverse feedback capacitance (pf)
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